FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) @ Vds | 3000pF @ 20V |
Power - Max | 1.7W |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |