Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta)
Rds On (Max) @ Id, Vgs 12 mOhm @ 12.5A, 20V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) @ Vds 2900pF @ 15V
Power - Max 3W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)